IPB020N10N5LFATMA1 vs IPD70N10S312ATMA2 Perbandingan

Perbandingan bersamaan detil IPB020N10N5LFATMA1 dari Infineon dan IPD70N10S312ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB020N10N5LFATMA1 IPD70N10S312ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 Linear FET —
Technology N-Channel Enhancement-Mode Power MOSFET OptiMOS-T Power-MOSFET (N-Channel)
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (Tc) 176 A —
Silicon-Limited Drain Current 289 A —
Package-Limited Drain Current 120 A —
Pulsed Drain Current (VDS=56V, tp=10ms) 10.2 A —
On-State Resistance RDS(on) max 2.0 mΩ —
Total Power Dissipation (Tc) 313 W —
Paket PG-TO263-3 (D2PAK) PG-TO252-3-11 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +175 °C -55C to +175C
Gate Threshold Voltage VGS(th) typ 2.5 V —
Status RoHS Compliant Compliant
Level MSL 1 1 (unlimited floor life)
Marking Code 020N10LF —
Part Number — IPD70N10S312ATMA2
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc) — 70 A
Power Dissipation (Ptot, Tc=25C) — 125 W
On-State Resistance RDS(on) — [DATA_NEEDED: typical RDS(on) at VGS=10V]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Jumlah Pin — 3 (Gate, Drain, Source)
Channel Type — N-Channel Enhancement Mode
Avalanche Rated — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon