IPB020N10N5LFATMA1 vs IPD70N10S312ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB020N10N5LFATMA1 disebabkan oleh Infineon dan IPD70N10S312ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB020N10N5LFATMA1 IPD70N10S312ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 Linear FET —
Technology N-Channel Enhancement-Mode Power MOSFET OptiMOS-T Power-MOSFET (N-Channel)
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (Tc) 176 A —
Silicon-Limited Drain Current 289 A —
Package-Limited Drain Current 120 A —
Pulsed Drain Current (VDS=56V, tp=10ms) 10.2 A —
On-State Resistance RDS(on) max 2.0 mΩ —
Total Power Dissipation (Tc) 313 W —
Kemasan PG-TO263-3 (D2PAK) PG-TO252-3-11 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +175 °C -55C to +175C
Gate Threshold Voltage VGS(th) typ 2.5 V —
Status RoHS Compliant Compliant
Aras MSL 1 1 (unlimited floor life)
Marking Code 020N10LF —
Part Number — IPD70N10S312ATMA2
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc) — 70 A
Power Dissipation (Ptot, Tc=25C) — 125 W
On-State Resistance RDS(on) — [DATA_NEEDED: typical RDS(on) at VGS=10V]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Kiraan Pin — 3 (Gate, Drain, Source)
Channel Type — N-Channel Enhancement Mode
Avalanche Rated — Yes

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