IPB020N10N5LFATMA1 vs IPD70N10S312ATMA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB020N10N5LFATMA1 sa pamamagitan ng Infineon at IPD70N10S312ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPB020N10N5LFATMA1 IPD70N10S312ATMA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 Linear FET —
Technology N-Channel Enhancement-Mode Power MOSFET OptiMOS-T Power-MOSFET (N-Channel)
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (Tc) 176 A —
Silicon-Limited Drain Current 289 A —
Package-Limited Drain Current 120 A —
Pulsed Drain Current (VDS=56V, tp=10ms) 10.2 A —
On-State Resistance RDS(on) max 2.0 mΩ —
Total Power Dissipation (Tc) 313 W —
Packhaging PG-TO263-3 (D2PAK) PG-TO252-3-11 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55 °C to +175 °C -55C to +175C
Gate Threshold Voltage VGS(th) typ 2.5 V —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 1 (unlimited floor life)
Marking Code 020N10LF —
Part Number — IPD70N10S312ATMA2
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc) — 70 A
Power Dissipation (Ptot, Tc=25C) — 125 W
On-State Resistance RDS(on) — [DATA_NEEDED: typical RDS(on) at VGS=10V]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Bilang ng Pin — 3 (Gate, Drain, Source)
Channel Type — N-Channel Enhancement Mode
Avalanche Rated — Yes

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