IPB081N06L3GATMA1 vs IPB020N08N5ATMA1 Perbandingan

Perbandingan bersamaan detil IPB081N06L3GATMA1 dari Infineon dan IPB020N08N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPB020N08N5ATMA1 IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPB081N06L3GATMA1 IPB020N08N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
Tipe Transistor N-Channel MOSFET —
Paket PG-TO263-3 (D2PAK) PG-TO263-3 (D2PAK-2)
Drain-Source Voltage (VDS) 60 V 80 V
Continuous Drain Current (ID) at Tc=25C 50 A 120 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] 480 A
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 1.2 V min, 2.1 V typ, 2.6 V max [DATA_NEEDED: VGS(th) value]
On-Resistance RDS(on) at VGS=10V 8.1 mOhm typical —
Maximum Power Dissipation (Pd) at Tc=25C 79 W —
Rentang Suhu Kerja -55 C to +175 C (junction) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Pin Configuration Gate / Drain / Source (D2PAK standard) —
Technology OptiMOS 3 (low-voltage power MOSFET) OptiMOS 5 (N-channel trench MOSFET)
Status RoHS Compliant Compliant
Level MSL 1 (unlimited) [DATA_NEEDED: MSL level]
Maximum RDS(on) at VGS=10V — 2.0 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Power Dissipation (PD) at Tc=25C — 300 W
Suhu Hubung Kerja — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value, approx 0.5 C/W]
Avalanche Energy Rated (EAS) — [DATA_NEEDED: EAS value]
Configuration — Single N-channel, 3-pin (2+Tab)

Spek dan Sumber

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