IPB081N06L3GATMA1 vs IPB020N08N5ATMA1 比較
詳細並排比較 IPB081N06L3GATMA1 由 Infineon 與 IPB020N08N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB081N06L3GATMA1 | IPB020N08N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| 封裝 | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK-2) |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A | 120 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | 480 A |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 1.2 V min, 2.1 V typ, 2.6 V max | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) at VGS=10V | 8.1 mOhm typical | — |
| Maximum Power Dissipation (Pd) at Tc=25C | 79 W | — |
| 工作溫度範圍 | -55 C to +175 C (junction) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 | — |
| Pin Configuration | Gate / Drain / Source (D2PAK standard) | — |
| Technology | OptiMOS 3 (low-voltage power MOSFET) | OptiMOS 5 (N-channel trench MOSFET) |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| Maximum RDS(on) at VGS=10V | — | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at Tc=25C | — | 300 W |
| 工作接面溫度 | — | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value, approx 0.5 C/W] |
| Avalanche Energy Rated (EAS) | — | [DATA_NEEDED: EAS value] |
| Configuration | — | Single N-channel, 3-pin (2+Tab) |