IPB081N06L3GATMA1 vs IPB020N08N5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB081N06L3GATMA1 disebabkan oleh Infineon dan IPB020N08N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPB020N08N5ATMA1 IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPB081N06L3GATMA1 IPB020N08N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
Jenis Transistor N-Channel MOSFET —
Kemasan PG-TO263-3 (D2PAK) PG-TO263-3 (D2PAK-2)
Drain-Source Voltage (VDS) 60 V 80 V
Continuous Drain Current (ID) at Tc=25C 50 A 120 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] 480 A
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 1.2 V min, 2.1 V typ, 2.6 V max [DATA_NEEDED: VGS(th) value]
On-Resistance RDS(on) at VGS=10V 8.1 mOhm typical —
Maximum Power Dissipation (Pd) at Tc=25C 79 W —
Gambaran Suhu Operasi -55 C to +175 C (junction) —
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 3 —
Pin Configuration Gate / Drain / Source (D2PAK standard) —
Technology OptiMOS 3 (low-voltage power MOSFET) OptiMOS 5 (N-channel trench MOSFET)
Status RoHS Compliant Compliant
Aras MSL 1 (unlimited) [DATA_NEEDED: MSL level]
Maximum RDS(on) at VGS=10V — 2.0 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Power Dissipation (PD) at Tc=25C — 300 W
Suhu Hubungan Operasi — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value, approx 0.5 C/W]
Avalanche Energy Rated (EAS) — [DATA_NEEDED: EAS value]
Configuration — Single N-channel, 3-pin (2+Tab)

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