IPB100N12S305ATMA1 vs BSC076N04NDATMA1 Perbandingan
Perbandingan bersamaan detil IPB100N12S305ATMA1 dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB100N12S305ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS Power MOSFET | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) | 100 A (Tc) | 20 A (Tc) |
| Power Dissipation (PD) | 300 W (Tc) | — |
| On-Resistance (RDS(on)) | 4.8 mOhm (typical) | — |
| Total Gate Charge (Qg) | 185 nC | — |
| Rentang Suhu Kerja | -55 C to +175 C (TJ) | — |
| Paket / Case | PG-TO263-3-1 (D2PAK, surface mount) | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| Tingkat Sensitivitas Kekeringan (MSL) | MSL1 (up to 260 C peak reflow) | — |
| Avalanche Tested | 100% Avalanche Tested | — |
| RoHS Compliance | RoHS Compliant (Green Product) | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Technology | — | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |