IPB100N12S305ATMA1 vs BSC076N04NDATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB100N12S305ATMA1 sa pamamagitan ng Infineon at BSC076N04NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB100N12S305ATMA1 IPB100N12S305ATMA1 - 120V 100A OptiMOS N-MOSFET | Infineon

IPB100N12S305ATMA1 - 120V 100A OptiMOS N-MOSFET | Infineon

IPB100N12S305ATMA1 ✓ Nakahanda
Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB100N12S305ATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS Power MOSFET —
Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID) 100 A (Tc) 20 A (Tc)
Power Dissipation (PD) 300 W (Tc) —
On-Resistance (RDS(on)) 4.8 mOhm (typical) —
Total Gate Charge (Qg) 185 nC —
Hanay ng Temperature na Operasyon -55 C to +175 C (TJ) —
Packhaging / Kaso PG-TO263-3-1 (D2PAK, surface mount) PG-TDSON-8-4 (SuperSO8, 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pins 3 (Gate, Drain, Source) —
Automotive Qualification AEC-Q101 Qualified —
Level ng Sensitivity sa Asid ng Moisture (MSL) MSL1 (up to 260 C peak reflow) —
Avalanche Tested 100% Avalanche Tested —
RoHS Compliance RoHS Compliant (Green Product) —
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Technology — Trench MOSFET (OptiMOS 3)
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Temperature ng Junction na Operasyon — -55 C to +175 C
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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