IPB100N12S305ATMA1 vs BSC076N04NDATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB100N12S305ATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB100N12S305ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS Power MOSFET | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) | 100 A (Tc) | 20 A (Tc) |
| Power Dissipation (PD) | 300 W (Tc) | — |
| On-Resistance (RDS(on)) | 4.8 mOhm (typical) | — |
| Total Gate Charge (Qg) | 185 nC | — |
| Gambaran Suhu Operasi | -55 C to +175 C (TJ) | — |
| Kemasan / Case | PG-TO263-3-1 (D2PAK, surface mount) | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 3 (Gate, Drain, Source) | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| Tingkat sensitiviti Air Nama (MSL) | MSL1 (up to 260 C peak reflow) | — |
| Avalanche Tested | 100% Avalanche Tested | — |
| RoHS Compliance | RoHS Compliant (Green Product) | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Technology | — | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |