IPB120N04S402ATMA1 vs BSC076N04NDATMA1 Perbandingan

Perbandingan bersamaan detil IPB120N04S402ATMA1 dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB120N04S402ATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 —
FET Type N-Channel, Enhancement Mode 2x N-Channel MOSFET array
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, TC) 120 A —
Power Dissipation (PD, TC) 158 W —
RDS(on) (typ @ VGS=10 V) 1.8 mΩ —
Paket PG-TO263-3 (D2PAK) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (2 + Tab) —
Rentang Suhu Kerja -55 °C to +175 °C —
Maximum Junction Temperature 175 °C —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge] —
Avalanche Energy Rating 100% Avalanche Tested —
Tingkat Sensitivitas Kekeringan (MSL) MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 —
RoHS Compliance Green Product (RoHS compliant) —
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Technology — Trench MOSFET (OptiMOS 3)
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubung Kerja — -55 C to +175 C
Paket / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)

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