IPB35N10S3L26ATMA1 vs IPG20N10S4L22AATMA1 Perbandingan
Perbandingan bersamaan detil IPB35N10S3L26ATMA1 dari Infineon dan IPG20N10S4L22AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB35N10S3L26ATMA1 | IPG20N10S4L22AATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T | — |
| Channel Type | N-Channel | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC | 35 A | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Package Type | PG-TO263-3 (D2PAK-2) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Channel Mode | Enhancement | — |
| RDS(on) (typical per Infineon product page) | 26.3 mΩ | — |
| Typical Gate Charge Qg @ Vgs | 80 nC | — |
| Maximum Drain-Source Resistance Rds | 1.7 mΩ (per RS Components listing) | — |
| Minimum Operating Temperature | -55 C | — |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | — |
| FET Type | — | Dual N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 20 A |
| On-State Resistance (R<sub>DS(on)</sub>) | — | 22 mΩ (typical) |
| Power Dissipation (P<sub>D</sub>) | — | 60 W |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| Gate Threshold (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: Vgs(th)] |
| Paket | — | PG-TDSON-8-10 (Wettable Flank) |
| Lead Configuration | — | Wettable Flank |
| Automotive Qualification | — | AEC-Q101 |
| Technology | — | OptiMOS T2 |
| Suhu Kerja | — | -55°C to +175°C |
| Channel Count | — | 2 (dual independent) |