IPB35N10S3L26ATMA1 vs IPG20N10S4L22AATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPB35N10S3L26ATMA1 tarafından Infineon ve IPG20N10S4L22AATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPB35N10S3L26ATMA1 | IPG20N10S4L22AATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T | — |
| Channel Type | N-Channel | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC | 35 A | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Package Type | PG-TO263-3 (D2PAK-2) | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Pin Sayısı | 3 (Gate, Drain, Source) | — |
| Channel Mode | Enhancement | — |
| RDS(on) (typical per Infineon product page) | 26.3 mΩ | — |
| Typical Gate Charge Qg @ Vgs | 80 nC | — |
| Maximum Drain-Source Resistance Rds | 1.7 mΩ (per RS Components listing) | — |
| Minimum Operating Temperature | -55 C | — |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | — |
| RoHS Durumu | [DATA_NEEDED: RoHS status] | Compliant |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | — |
| FET Type | — | Dual N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 20 A |
| On-State Resistance (R<sub>DS(on)</sub>) | — | 22 mΩ (typical) |
| Power Dissipation (P<sub>D</sub>) | — | 60 W |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| Gate Threshold (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: Vgs(th)] |
| Paket | — | PG-TDSON-8-10 (Wettable Flank) |
| Lead Configuration | — | Wettable Flank |
| Automotive Qualification | — | AEC-Q101 |
| Technology | — | OptiMOS T2 |
| İşletim Sıcaklığı | — | -55°C to +175°C |
| Channel Count | — | 2 (dual independent) |