IPB60R165CPATMA1 vs IPD50R380CEAUMA1 Perbandingan

Perbandingan bersamaan detil IPB60R165CPATMA1 dari Infineon dan IPD50R380CEAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB60R165CPATMA1 IPD50R380CEAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolMOS CP (superjunction, N-Channel) CoolMOS CE (super-junction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 21 A —
Power Dissipation (PD, Tc=25°C) 192 W —
On-Resistance RDS(on), max (VGS=10V) 165 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Total Gate Charge (Qg, typ) [DATA_NEEDED: Qg typical value] —
Operating Temperature Range (TJ) -55°C to +150°C —
Paket PG-TO263-3-2 (D2PAK-2) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (Pb-free lead plating) Compliant
JEDEC Qualification Qualified per JEDEC for target applications —
dv/dt Ruggedness Extreme dv/dt rated —
Polarity / Channel N-Channel —
Drain-Source Voltage (V(BR)DSS) — 500 V
Continuous Drain Current (Id) at Tc=25C — 14.1 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: Idm]
On-State Resistance (RDS(on)) max at VGS=10V — 380 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Total Power Dissipation (Ptot) at Tc=25C — 98 W
Suhu Hubung Kerja — -55C to +150C
Channel Type — N-Channel
AEC-Q101 Automotive — Not qualified (CE variant; use CE-A for automotive)
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL level]

Spek dan Sumber

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