IPB60R165CPATMA1 vs IPD50R380CEAUMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma IPB60R165CPATMA1 tarafından Infineon ve IPD50R380CEAUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IPB60R165CPATMA1 IPD50R380CEAUMA1
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Technology CoolMOS CP (superjunction, N-Channel) CoolMOS CE (super-junction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 21 A —
Power Dissipation (PD, Tc=25°C) 192 W —
On-Resistance RDS(on), max (VGS=10V) 165 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Total Gate Charge (Qg, typ) [DATA_NEEDED: Qg typical value] —
Operating Temperature Range (TJ) -55°C to +150°C —
Paket PG-TO263-3-2 (D2PAK-2) PG-TO252-3 (DPAK)
Montaj Türü Surface Mount Surface Mount
RoHS Durumu Compliant (Pb-free lead plating) Compliant
JEDEC Qualification Qualified per JEDEC for target applications —
dv/dt Ruggedness Extreme dv/dt rated —
Polarity / Channel N-Channel —
Drain-Source Voltage (V(BR)DSS) — 500 V
Continuous Drain Current (Id) at Tc=25C — 14.1 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: Idm]
On-State Resistance (RDS(on)) max at VGS=10V — 380 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Total Power Dissipation (Ptot) at Tc=25C — 98 W
İşletim Jant Sıcaklığı — -55C to +150C
Channel Type — N-Channel
AEC-Q101 Automotive — Not qualified (CE variant; use CE-A for automotive)
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL level]

Dökümanlar & Kaynaklar

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