IPC100N04S51R7ATMA1 vs IAUCN08S7L033ATMA1 Perbandingan
Perbandingan bersamaan detil IPC100N04S51R7ATMA1 dari Infineon dan IAUCN08S7L033ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPC100N04S51R7ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | Automotive OptiMOS 7 |
| Tipe Transistor | N-Channel MOSFET, Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL1 (260 °C peak reflow) | 1 (per JEDEC J-STD-020, typical for this package) |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | — |
| Status RoHS | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Rentang Suhu Kerja | — | -55°C to +175°C (TJ) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |