IPC100N04S51R7ATMA1 vs IAUCN08S7L033ATMA1 مقایسه
مقایسه دقیق کنار به کنار IPC100N04S51R7ATMA1 توسط Infineon و IAUCN08S7L033ATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IPC100N04S51R7ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | Automotive OptiMOS 7 |
| نوع ترانزیستور | N-Channel MOSFET, Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| دمای اتصال کاری | -55 °C to +175 °C | — |
| بسته‌بندی | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| نوع نصب | Surface Mount | Surface Mount |
| سطح MSL | MSL1 (260 °C peak reflow) | 1 (per JEDEC J-STD-020, typical for this package) |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | — |
| وضعیت RoHS | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| محدوده دمای کاری | — | -55°C to +175°C (TJ) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |