IPC100N04S51R7ATMA1 vs IAUCN08S7L033ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPC100N04S51R7ATMA1 disebabkan oleh Infineon dan IAUCN08S7L033ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPC100N04S51R7ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | Automotive OptiMOS 7 |
| Jenis Transistor | N-Channel MOSFET, Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (260 °C peak reflow) | 1 (per JEDEC J-STD-020, typical for this package) |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | — |
| Status RoHS | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Gambaran Suhu Operasi | — | -55°C to +175°C (TJ) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |