IPC100N04S5L1R1ATMA1 vs IPC100N04S5L1R5ATMA1 Perbandingan

Perbandingan bersamaan detil IPC100N04S5L1R1ATMA1 dari Infineon dan IPC100N04S5L1R5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPC100N04S5L1R1ATMA1 IPC100N04S5L1R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 40 V OptiMOS-5 40 V
Tipe Transistor N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC 100 A —
On-Resistance RDS(on) max 1.1 mΩ —
Power Dissipation (PD) at TC 150 W —
Gate Threshold Voltage VGS(th) Logic Level —
Rentang Suhu Kerja -55 °C to +175 °C -55C to +175C
Paket PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-34 (SS08 leadless)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (unlimited floor life, 260 °C peak reflow) MSL1 (260C peak reflow)
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% avalanche tested 100%
RoHS Compliance Green Product (RoHS compliant) —
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
AEC-Q101 Qualified — Yes
Status RoHS — Compliant (Green Product)

Spek dan Sumber

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