IPC100N04S5L1R1ATMA1 vs IPC100N04S5L1R5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPC100N04S5L1R1ATMA1 disebabkan oleh Infineon dan IPC100N04S5L1R5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPC100N04S5L1R1ATMA1 IPC100N04S5L1R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 40 V OptiMOS-5 40 V
Jenis Transistor N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC 100 A —
On-Resistance RDS(on) max 1.1 mΩ —
Power Dissipation (PD) at TC 150 W —
Gate Threshold Voltage VGS(th) Logic Level —
Gambaran Suhu Operasi -55 °C to +175 °C -55C to +175C
Kemasan PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-34 (SS08 leadless)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (unlimited floor life, 260 °C peak reflow) MSL1 (260C peak reflow)
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% avalanche tested 100%
RoHS Compliance Green Product (RoHS compliant) —
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
AEC-Q101 Qualified — Yes
Status RoHS — Compliant (Green Product)

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