IPC50N04S5L5R5ATMA1 vs IAUC50N08S5N102ATMA1 Perbandingan

Perbandingan bersamaan detil IPC50N04S5L5R5ATMA1 dari Infineon dan IAUC50N08S5N102ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC50N08S5N102ATMA1 IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon

IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon

IAUC50N08S5N102ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPC50N04S5L5R5ATMA1 IAUC50N08S5N102ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Mode Enhancement Mode —
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID, Tc) 50 A —
Maximum Drain Current (silicon-limited, 25 °C) 60 A —
On-Resistance RDS(on) max @ VGS=10 V 5.5 mΩ —
Gate Threshold VGS(th) Logic Level (enhancement at ≤ 4.5 V VGS) —
Power Dissipation (Tc) 42 W —
Thermal Resistance Junction-to-Case RthJC 3.6 K/W —
Rentang Suhu Kerja -55 °C to +175 °C -55°C to +175°C
Paket PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) —
Tipe Mounting Surface Mount Surface Mount
AEC-Q101 Qualification Qualified (automotive grade) —
MSL (Moisture Sensitivity Level) MSL1 —
Peak Reflow Temperature 260 °C —
Avalanche Rating 100 % Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Continuous Drain Current (ID) at TC=25°C — 50 A
On-Resistance (RDS(on)) — 10.2 mΩ @ 25 A, 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate-Source Voltage (VGS) Max — ±20 V
Total Gate Charge (Qg) — 21 nC @ 10 V
Input Capacitance (Ciss) — 1394 pF @ 40 V
Power Dissipation (PD) at TC=25°C — 60 W
Paket / Case — PG-TDSON-8-33
Qualification — AEC-Q101
Status RoHS — Compliant
Level MSL — [DATA_NEEDED: MSL rating]

Spek dan Sumber

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