IPC50N04S5L5R5ATMA1 vs IAUC50N08S5N102ATMA1 比較
詳細並排比較 IPC50N04S5L5R5ATMA1 由 Infineon 與 IAUC50N08S5N102ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ 啟用中規格比較
| 參數 | IPC50N04S5L5R5ATMA1 | IAUC50N08S5N102ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| 工作溫度範圍 | -55 °C to +175 °C | -55°C to +175°C |
| 封裝 | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID) at TC=25°C | — | 50 A |
| On-Resistance (RDS(on)) | — | 10.2 mΩ @ 25 A, 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Gate Charge (Qg) | — | 21 nC @ 10 V |
| Input Capacitance (Ciss) | — | 1394 pF @ 40 V |
| Power Dissipation (PD) at TC=25°C | — | 60 W |
| 封裝 / 外殼 | — | PG-TDSON-8-33 |
| Qualification | — | AEC-Q101 |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |