IPC70N04S5L4R2ATMA1 vs BSC019N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil IPC70N04S5L4R2ATMA1 dari Infineon dan BSC019N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPC70N04S5L4R2ATMA1 BSC019N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 (N-channel trench)
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
Paket PG-TDSON-8-34 (Surface Mount) PG-TSON-8-3 (SuperSO8 5x6 mm)
Operating Temperature (Tj) -55°C to +175°C —
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260°C peak reflow) 1
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% (60 A production test) —
Status RoHS Compliant (Green Product) Compliant
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Manufacturer — Infineon Technologies
Polarity — N-Channel
Drain-Source Voltage (VDS) max — 80 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at TA=25C — 28 A
Continuous Drain Current (ID) at TC=25C — 237 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max at VGS=10V — 1.9 mOhm
Gate Threshold Voltage VGS(th) typ — 3.0 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 214 W
Rentang Suhu Kerja — -55 C to +150 C
Avalanche Rated — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon