IPC90N04S5L3R3ATMA1 vs BSC027N10NS5ATMA1 Perbandingan

Perbandingan bersamaan detil IPC90N04S5L3R3ATMA1 dari Infineon dan BSC027N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPC90N04S5L3R3ATMA1 BSC027N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif NRND
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V 100 V
Continuous Drain Current (ID) at TC=25°C 90 A —
On-Resistance RDS(on) max at VGS=10V 3.3 mΩ —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) 1.7 V to 2.7 V (logic level) —
Total Power Dissipation (TC=25°C) 62 W —
Suhu Hubung Kerja -55°C to +175°C —
Storage Temperature Range [DATA_NEEDED: storage temp range] —
Paket PG-TDSON-8-34 (TDSON-8) PG-TSON-8-3 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
MSL Moisture Sensitivity MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260°C —
Qualification AEC-Q101 automotive qualified Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)
Avalanche Tested 100% (production-level) —
RoHS Compliance Compliant (Green Product) —
Part Number — BSC027N10NS5ATMA1
Technology — OptiMOS 5 (100V)
Channel Type — N-Channel
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Rentang Suhu Kerja — [DATA_NEEDED: Tj min/max]
Status RoHS — Compliant
Level MSL — [DATA_NEEDED: MSL rating]

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