IPC90N04S5L3R3ATMA1 vs BSC0501NSIATMA1 Perbandingan

Perbandingan bersamaan detil IPC90N04S5L3R3ATMA1 dari Infineon dan BSC0501NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPC90N04S5L3R3ATMA1 BSC0501NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon
Product Family OptiMOS 5 40V OptiMOS 5 25V/30V
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID) at TC=25°C 90 A —
On-Resistance RDS(on) max at VGS=10V 3.3 mΩ —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) 1.7 V to 2.7 V (logic level) —
Total Power Dissipation (TC=25°C) 62 W —
Suhu Hubung Kerja -55°C to +175°C -55C to +150C
Storage Temperature Range [DATA_NEEDED: storage temp range] —
Paket PG-TDSON-8-34 (TDSON-8) PG-TDSON-8-6 (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
MSL Moisture Sensitivity MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260°C —
Qualification AEC-Q101 automotive qualified —
Avalanche Tested 100% (production-level) —
RoHS Compliance Compliant (Green Product) —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 50 W
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Level MSL — 1 (per JEDEC J-STD-020)
Status RoHS — Compliant
Avalanche Rated — Yes
Technology — Trench-gate OptiMOS 5

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon