IPD031N06L3GATMA1 vs IRLR8726TRLPBF Perbandingan

Perbandingan bersamaan detil IPD031N06L3GATMA1 dari Infineon dan IRLR8726TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD031N06L3GATMA1 IRLR8726TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) 400 A [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25°C 167 W —
RDS(on) Max at VGS=10V 3.1 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V —
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V —
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] —
Rentang Suhu Kerja -55°C to +175°C —
Paket PG-TO252-3 (DPAK) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Series OptiMOS 3 —
Level MSL 1 (Unlimited) 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging)
Status RoHS Compliant —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TC=25C — 86 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance RDS(on) Max at VGS=10V — 5.8 mOhm
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — 15 nC
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Maximum Power Dissipation (PD) at TC=25C — 75 W
Suhu Hubung Kerja — -55C to +175C
Technology Family — StrongIRFET
RoHS Compliance — ROHS3 Compliant
Lead-Free — Yes (PBF suffix)

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