IPD068P03L3GATMA1 vs IPC90N04S5L3R3ATMA1 Perbandingan

Perbandingan bersamaan detil IPD068P03L3GATMA1 dari Infineon dan IPC90N04S5L3R3ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD068P03L3GATMA1 IPC90N04S5L3R3ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS P-Channel Power MOSFET OptiMOS 5 40V
Polarity / Channel Type P-Channel —
Drain-Source Voltage (V_DS) -30 V —
Continuous Drain Current (I_D) at T_C -70 A —
Pulsed Drain Current (I_D,pulse) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at T_C 100 W —
R_DS(on) max at V_GS=-10V 0.005 ohm (typical) —
Gate-Source Threshold Voltage (V_GS(th)) -1.0 V to -2.2 V —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
Rentang Suhu Kerja -55C to +175C (junction) —
Paket PG-TO252-3 (DPAK) PG-TDSON-8-34 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Channel Mode Enhancement —
Status RoHS Compliant —
Level MSL 1 (unlimited floor life at <30C/85% RH) —
Technology Trench MOSFET (OptiMOS) —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
Suhu Hubung Kerja — -55°C to +175°C
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Qualification — AEC-Q101 automotive qualified
Avalanche Tested — 100% (production-level)
RoHS Compliance — Compliant (Green Product)

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