IPD30N06S215ATMA2 vs IRFR4105TRPBF Perbandingan
Perbandingan bersamaan detil IPD30N06S215ATMA2 dari Infineon dan IRFR4105TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD30N06S215ATMA2 | IRFR4105TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS Power MOSFET | — |
| Tipe Transistor | N-Channel Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID, Tc) | 30 A | — |
| Power Dissipation (PD, Tc) | 136 W | — |
| Paket / Case | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55 C to +175 C (junction) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Level MSL | MSL1 (up to 260 C peak reflow) | [DATA_NEEDED: MSL rating] |
| Avalanche Tested | 100% avalanche tested | — |
| Lead-Free / RoHS | Green package (lead free), RoHS compliant | — |
| Gate Threshold Type | Logic-level compatible | — |
| Packing | Tape & Reel (T/R) | — |
| Technology | — | HEXFET (5th generation IR MOSFET) |
| Drain-Source Voltage (V_DS max) | — | 55 V |
| Continuous Drain Current (I_D at Tc) | — | 27 A |
| On-Resistance (R_DS(on) max at V_GS=10V) | — | 45 milliohm |
| Gate-Source Voltage (V_GS max) | — | 20 V |
| Total Gate Charge (Q_G) | — | 22.7 nC |
| Power Dissipation (P_D at Tc) | — | 68 W |
| Paket | — | TO-252AA (DPAK) |
| Rentang Suhu Kerja | — | -55C to +175C |
| Gate Threshold Voltage (V_GS(th) typ) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Status RoHS | — | Compliant (lead-free, PBF suffix) |
| Packaging Type | — | Tape and Reel (TRPBF) |
| Avalanche Energy (E_AS) | — | [DATA_NEEDED: E_AS rating] |