IPD30N06S215ATMA2 vs IRFR4105TRPBF 比較
詳細並排比較 IPD30N06S215ATMA2 由 Infineon 與 IRFR4105TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD30N06S215ATMA2 | IRFR4105TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS Power MOSFET | — |
| 電晶體類型 | N-Channel Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID, Tc) | 30 A | — |
| Power Dissipation (PD, Tc) | 136 W | — |
| 封裝 / 外殼 | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55 C to +175 C (junction) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSL 等級 | MSL1 (up to 260 C peak reflow) | [DATA_NEEDED: MSL rating] |
| Avalanche Tested | 100% avalanche tested | — |
| Lead-Free / RoHS | Green package (lead free), RoHS compliant | — |
| Gate Threshold Type | Logic-level compatible | — |
| Packing | Tape & Reel (T/R) | — |
| Technology | — | HEXFET (5th generation IR MOSFET) |
| Drain-Source Voltage (V_DS max) | — | 55 V |
| Continuous Drain Current (I_D at Tc) | — | 27 A |
| On-Resistance (R_DS(on) max at V_GS=10V) | — | 45 milliohm |
| Gate-Source Voltage (V_GS max) | — | 20 V |
| Total Gate Charge (Q_G) | — | 22.7 nC |
| Power Dissipation (P_D at Tc) | — | 68 W |
| 封裝 | — | TO-252AA (DPAK) |
| 工作溫度範圍 | — | -55C to +175C |
| Gate Threshold Voltage (V_GS(th) typ) | — | [DATA_NEEDED: V_GS(th) typical value] |
| RoHS 狀態 | — | Compliant (lead-free, PBF suffix) |
| Packaging Type | — | Tape and Reel (TRPBF) |
| Avalanche Energy (E_AS) | — | [DATA_NEEDED: E_AS rating] |