IPD30N06S215ATMA2 vs IRFR4105TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N06S215ATMA2 disebabkan oleh Infineon dan IRFR4105TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD30N06S215ATMA2 | IRFR4105TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS Power MOSFET | — |
| Jenis Transistor | N-Channel Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID, Tc) | 30 A | — |
| Power Dissipation (PD, Tc) | 136 W | — |
| Kemasan / Case | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55 C to +175 C (junction) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Aras MSL | MSL1 (up to 260 C peak reflow) | [DATA_NEEDED: MSL rating] |
| Avalanche Tested | 100% avalanche tested | — |
| Lead-Free / RoHS | Green package (lead free), RoHS compliant | — |
| Gate Threshold Type | Logic-level compatible | — |
| Packing | Tape & Reel (T/R) | — |
| Technology | — | HEXFET (5th generation IR MOSFET) |
| Drain-Source Voltage (V_DS max) | — | 55 V |
| Continuous Drain Current (I_D at Tc) | — | 27 A |
| On-Resistance (R_DS(on) max at V_GS=10V) | — | 45 milliohm |
| Gate-Source Voltage (V_GS max) | — | 20 V |
| Total Gate Charge (Q_G) | — | 22.7 nC |
| Power Dissipation (P_D at Tc) | — | 68 W |
| Kemasan | — | TO-252AA (DPAK) |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Gate Threshold Voltage (V_GS(th) typ) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Status RoHS | — | Compliant (lead-free, PBF suffix) |
| Packaging Type | — | Tape and Reel (TRPBF) |
| Avalanche Energy (E_AS) | — | [DATA_NEEDED: E_AS rating] |