IPD30N10S3L34ATMA1 vs IPD30N10S3L34ATMA2 Perbandingan

Perbandingan bersamaan detil IPD30N10S3L34ATMA1 dari Infineon dan IPD30N10S3L34ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD30N10S3L34ATMA1 IPD30N10S3L34ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS-T2 —
Tipe Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc=25°C) 30 A —
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (PD, Tc=25°C) 57 W —
Drain-Source On-Resistance (RDS(on) max) 31 mΩ @ VGS=10 V —
Gate-Source Threshold Voltage (VGS(th) typ) 1.7 V (range 1.0 V to 2.5 V) —
Total Gate Charge (Qg typ) 23 nC —
Suhu Hubung Kerja -55°C to +175°C -55 C to +175 C
Paket PG-TO252-3-11 (DPAK-2 / SC-63) —
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101
Level MSL 1 (JEDEC J-STD-020, 260°C peak reflow) [DATA_NEEDED: MSL level]
RoHS / REACH Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated 100% Avalanche tested —
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D, Tc) — 30 A
Pulsed Drain Current (I_DM) — 180 A
Power Dissipation (P_D, Tc) — 57 W
R_DS(on) max at V_GS=10V — 31 mOhm (typ)
Gate Threshold Voltage V_GS(th) max — 2.4 V
Total Gate Charge (Qg) max — 31 nC
Package / Supplier Device Package — PG-TO252-3-11 (DPAK)
Pin / Tab Count — 3 (2 + Tab)
Technology — OptiMOS-T (trench)
Status RoHS — Compliant

Spek dan Sumber

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