IPD30N10S3L34ATMA1 vs IPD30N10S3L34ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N10S3L34ATMA1 disebabkan oleh Infineon dan IPD30N10S3L34ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD30N10S3L34ATMA1 IPD30N10S3L34ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS-T2 —
Jenis Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc=25°C) 30 A —
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (PD, Tc=25°C) 57 W —
Drain-Source On-Resistance (RDS(on) max) 31 mΩ @ VGS=10 V —
Gate-Source Threshold Voltage (VGS(th) typ) 1.7 V (range 1.0 V to 2.5 V) —
Total Gate Charge (Qg typ) 23 nC —
Suhu Hubungan Operasi -55°C to +175°C -55 C to +175 C
Kemasan PG-TO252-3-11 (DPAK-2 / SC-63) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101
Aras MSL 1 (JEDEC J-STD-020, 260°C peak reflow) [DATA_NEEDED: MSL level]
RoHS / REACH Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated 100% Avalanche tested —
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D, Tc) — 30 A
Pulsed Drain Current (I_DM) — 180 A
Power Dissipation (P_D, Tc) — 57 W
R_DS(on) max at V_GS=10V — 31 mOhm (typ)
Gate Threshold Voltage V_GS(th) max — 2.4 V
Total Gate Charge (Qg) max — 31 nC
Package / Supplier Device Package — PG-TO252-3-11 (DPAK)
Pin / Tab Count — 3 (2 + Tab)
Technology — OptiMOS-T (trench)
Status RoHS — Compliant

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