IPD30N10S3L34ATMA2 vs IPD082N10N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPD30N10S3L34ATMA2 dari Infineon dan IPD082N10N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD30N10S3L34ATMA2 IPD082N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, Tc) 30 A —
Pulsed Drain Current (I_DM) 180 A —
Power Dissipation (P_D, Tc) 57 W —
R_DS(on) max at V_GS=10V 31 mOhm (typ) —
Gate Threshold Voltage V_GS(th) max 2.4 V —
Total Gate Charge (Qg) max 31 nC —
Suhu Hubung Kerja -55 C to +175 C -55°C to +175°C
Package / Supplier Device Package PG-TO252-3-11 (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Pin / Tab Count 3 (2 + Tab) —
Technology OptiMOS-T (trench) OptiMOS 3 (Trench N-Channel)
Automotive Qualification AEC-Q101 —
Level MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Part Number — IPD082N10N3GATMA1
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ Tc=25°C — 80 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10 V — 8.2 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) @ Tc=25°C — 125 W
Paket / Case — PG-TO252-3 (DPAK), surface mount
Jumlah Pin — 3 (Gate, Drain, Source)
Automotive Qualified (AEC-Q101) — Not applicable (industrial/consumer grade)
Lead-Free — Yes

Spek dan Sumber

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