IPD30N10S3L34ATMA2 vs IPD50P04P413ATMA2 Perbandingan

Perbandingan bersamaan detil IPD30N10S3L34ATMA2 dari Infineon dan IPD50P04P413ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD30N10S3L34ATMA2 IPD50P04P413ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, Tc) 30 A —
Pulsed Drain Current (I_DM) 180 A —
Power Dissipation (P_D, Tc) 57 W —
R_DS(on) max at V_GS=10V 31 mOhm (typ) —
Gate Threshold Voltage V_GS(th) max 2.4 V —
Total Gate Charge (Qg) max 31 nC —
Suhu Hubung Kerja -55 C to +175 C —
Package / Supplier Device Package PG-TO252-3-11 (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Pin / Tab Count 3 (2 + Tab) —
Technology OptiMOS-T (trench) OptiMOS-P2 (Trench)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Level MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Polarity / Device Type — P-Channel MOSFET
Drain-Source Voltage (VDS) — -40 V
Continuous Drain Current (TC=25°C, ID) — 50 A
Continuous Drain Current (TC=100°C, ID) — [DATA_NEEDED: ID @ 100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Power Dissipation (TC=25°C, Ptot) — 58 W
On-State Resistance (RDS(on)) @ VGS=-10V — 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V — [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate-Source Voltage (VGS) max — ±20 V
Maximum Junction Temperature (TJ,max) — 175 °C
Rentang Suhu Kerja — -55 °C to +175 °C
Paket — PG-TO252-3-313 (DPAK)
Standard Pack Quantity (13" reel) — 2500 pcs

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