IPD30N10S3L34ATMA2 vs IPD50P04P413ATMA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD30N10S3L34ATMA2 sa pamamagitan ng Infineon at IPD50P04P413ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 ✓ Nakahanda
Infineon
IPD50P04P413ATMA2 IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2

IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2

IPD50P04P413ATMA2 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD30N10S3L34ATMA2 IPD50P04P413ATMA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, Tc) 30 A —
Pulsed Drain Current (I_DM) 180 A —
Power Dissipation (P_D, Tc) 57 W —
R_DS(on) max at V_GS=10V 31 mOhm (typ) —
Gate Threshold Voltage V_GS(th) max 2.4 V —
Total Gate Charge (Qg) max 31 nC —
Temperature ng Junction na Operasyon -55 C to +175 C —
Package / Supplier Device Package PG-TO252-3-11 (DPAK) —
Uri ng Pagpapasok Surface Mount Surface Mount
Pin / Tab Count 3 (2 + Tab) —
Technology OptiMOS-T (trench) OptiMOS-P2 (Trench)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Level ng MSL [DATA_NEEDED: MSL level] 1
Tindminan RoHS Compliant Compliant
Polarity / Device Type — P-Channel MOSFET
Drain-Source Voltage (VDS) — -40 V
Continuous Drain Current (TC=25°C, ID) — 50 A
Continuous Drain Current (TC=100°C, ID) — [DATA_NEEDED: ID @ 100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Power Dissipation (TC=25°C, Ptot) — 58 W
On-State Resistance (RDS(on)) @ VGS=-10V — 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V — [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate-Source Voltage (VGS) max — ±20 V
Maximum Junction Temperature (TJ,max) — 175 °C
Hanay ng Temperature na Operasyon — -55 °C to +175 °C
Packhaging — PG-TO252-3-313 (DPAK)
Standard Pack Quantity (13" reel) — 2500 pcs

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