IPD60R600P7ATMA1 vs IPD60R210PFD7SAUMA1 Perbandingan

Perbandingan bersamaan detil IPD60R600P7ATMA1 dari Infineon dan IPD60R210PFD7SAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD60R600P7ATMA1 IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD60R600P7ATMA1 IPD60R210PFD7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD60R600P7ATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
Tipe Transistor N-Channel MOSFET —
Technology Superjunction (SJ) / CoolMOS Superjunction (CoolMOS) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, TC) 6 A —
On-Resistance (RDS(on)) 490 mOhm (max) —
Power Dissipation (PD, TC) 30 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Rentang Suhu Kerja -55C to +150C (TJ) -55C to +150C (TJ)
Paket / Case PG-TO252-3 (DPAK), surface mount —
Tipe Mounting Surface Mount Surface Mount (SMT)
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Generation CoolMOS 7th generation (P7, successor to P6) —
Ordering Code Suffix ATMA1 = Tape & Reel, 13-inch —
Product Family — CoolMOS PFD7
Continuous Drain Current (ID, Tc) — 16 A
On-Resistance (RDS(on), max) — 210 mOhm
Power Dissipation (Ptot, Tc=25C) — 64 W
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Package Type — TO-252 (DPAK)
Manufacturer Package Designator — PG-TO252-3-344
Pin Configuration — 3-Pin (2+Tab) - Gate, Drain (tab), Source
Lead-Free / RoHS — Yes (compliant)
Application Segment — Consumer-grade SMPS

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon