IPD60R600P7ATMA1 vs IPD60R210PFD7SAUMA1 比較

詳細並排比較 IPD60R600P7ATMA1 由 Infineon 與 IPD60R210PFD7SAUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD60R600P7ATMA1 IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 ✓ 啟用中
Infineon
IPD60R210PFD7SAUMA1 IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 ✓ 啟用中

規格比較

參數 IPD60R600P7ATMA1 IPD60R210PFD7SAUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Part Number IPD60R600P7ATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
電晶體類型 N-Channel MOSFET —
Technology Superjunction (SJ) / CoolMOS Superjunction (CoolMOS) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, TC) 6 A —
On-Resistance (RDS(on)) 490 mOhm (max) —
Power Dissipation (PD, TC) 30 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
工作溫度範圍 -55C to +150C (TJ) -55C to +150C (TJ)
封裝 / 外殼 PG-TO252-3 (DPAK), surface mount —
安裝類型 Surface Mount Surface Mount (SMT)
MSL 等級 1 (per JEDEC J-STD-020) —
RoHS 狀態 Compliant —
Generation CoolMOS 7th generation (P7, successor to P6) —
Ordering Code Suffix ATMA1 = Tape & Reel, 13-inch —
Product Family — CoolMOS PFD7
Continuous Drain Current (ID, Tc) — 16 A
On-Resistance (RDS(on), max) — 210 mOhm
Power Dissipation (Ptot, Tc=25C) — 64 W
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Package Type — TO-252 (DPAK)
Manufacturer Package Designator — PG-TO252-3-344
Pin Configuration — 3-Pin (2+Tab) - Gate, Drain (tab), Source
Lead-Free / RoHS — Yes (compliant)
Application Segment — Consumer-grade SMPS

資料表與資源

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