IPD70N10S312ATMA2 vs IPB020N10N5LFATMA1 Perbandingan

Perbandingan bersamaan detil IPD70N10S312ATMA2 dari Infineon dan IPB020N10N5LFATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD70N10S312ATMA2 IPB020N10N5LFATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD70N10S312ATMA2 —
Technology OptiMOS-T Power-MOSFET (N-Channel) N-Channel Enhancement-Mode Power MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc) 70 A —
Power Dissipation (Ptot, Tc=25C) 125 W —
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Rentang Suhu Kerja -55C to +175C -55 °C to +175 °C
Paket PG-TO252-3-11 (DPAK) PG-TO263-3 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) —
Channel Type N-Channel Enhancement Mode —
Status RoHS Compliant Compliant
Level MSL 1 (unlimited floor life) 1
Avalanche Rated Yes —
Product Family — OptiMOS 5 Linear FET
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (Tc) — 176 A
Silicon-Limited Drain Current — 289 A
Package-Limited Drain Current — 120 A
Pulsed Drain Current (VDS=56V, tp=10ms) — 10.2 A
On-State Resistance RDS(on) max — 2.0 mΩ
Total Power Dissipation (Tc) — 313 W
Gate Threshold Voltage VGS(th) typ — 2.5 V
Marking Code — 020N10LF

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