IPD78CN10NGATMA1 vs IPD031N03LGATMA1 Perbandingan

Perbandingan bersamaan detil IPD78CN10NGATMA1 dari Infineon dan IPD031N03LGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD78CN10NGATMA1 IPD031N03LGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 2 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Tc=25C 13 A —
On-Resistance RDS(on) Max at VGS=10V 78 mOhm —
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) Max at Tc=25C 31 W —
Operating Junction Temperature Max 175 C —
Paket / Case PG-TO252-3 (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) + Tab —
Lead Plating Pb-free (Matte Tin) —
RoHS Compliance Compliant —
JEDEC Qualification Qualified per JEDEC1 for target application —
Technology OptiMOS 2 Power-Transistor MOSFET (Metal Oxide), OptiMOS 3
Level MSL 1 (per JEDEC J-STD-020) 1
FET Type — N-Channel
Drain-to-Source Voltage (Vdss) — 30 V
Continuous Drain Current (Id) @ 25 °C — 90 A (Tc)
Power Dissipation (Pd) — 94 W (Tc)
RDS(on) Max @ VGS=10V — 3.1 mΩ
RDS(on) Max @ VGS=4.5V — [DATA_NEEDED: RDS(on) @ 4.5V]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical/max]
Drive Voltage (Max RDS(on), Min RDS(on)) — 4.5 V, 10 V
Gate Charge (Qg) — [DATA_NEEDED: Qg typical @ 10V Vgs]
Output Charge (Qoss) — Ultra low (per datasheet tagline)
Suhu Kerja — -55 °C to +175 °C (junction)
Paket — PG-TO252-3-11 (DPAK-2)
Mounting Tab — Drain (electrically connected)
Avalanche Energy Rated — Yes (per OptiMOS 3 datasheet family)
Status RoHS — Compliant

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