IPD78CN10NGATMA1 vs IPD031N03LGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD78CN10NGATMA1 disebabkan oleh Infineon dan IPD031N03LGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD78CN10NGATMA1 IPD031N03LGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 2 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Tc=25C 13 A —
On-Resistance RDS(on) Max at VGS=10V 78 mOhm —
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) Max at Tc=25C 31 W —
Operating Junction Temperature Max 175 C —
Kemasan / Case PG-TO252-3 (DPAK) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) + Tab —
Lead Plating Pb-free (Matte Tin) —
RoHS Compliance Compliant —
JEDEC Qualification Qualified per JEDEC1 for target application —
Technology OptiMOS 2 Power-Transistor MOSFET (Metal Oxide), OptiMOS 3
Aras MSL 1 (per JEDEC J-STD-020) 1
FET Type — N-Channel
Drain-to-Source Voltage (Vdss) — 30 V
Continuous Drain Current (Id) @ 25 °C — 90 A (Tc)
Power Dissipation (Pd) — 94 W (Tc)
RDS(on) Max @ VGS=10V — 3.1 mΩ
RDS(on) Max @ VGS=4.5V — [DATA_NEEDED: RDS(on) @ 4.5V]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical/max]
Drive Voltage (Max RDS(on), Min RDS(on)) — 4.5 V, 10 V
Gate Charge (Qg) — [DATA_NEEDED: Qg typical @ 10V Vgs]
Output Charge (Qoss) — Ultra low (per datasheet tagline)
Suhu Operasi — -55 °C to +175 °C (junction)
Kemasan — PG-TO252-3-11 (DPAK-2)
Mounting Tab — Drain (electrically connected)
Avalanche Energy Rated — Yes (per OptiMOS 3 datasheet family)
Status RoHS — Compliant

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