IPD90N04S403ATMA1 vs BSC097N06NSATMA1 Perbandingan

Perbandingan bersamaan detil IPD90N04S403ATMA1 dari Infineon dan BSC097N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD90N04S403ATMA1 BSC097N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 —
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tc) 90 A —
On-State Resistance (R_DS(on)) 3.2 mOhm typical at V_GS = 10 V —
Maximum Power Dissipation (P_D, Tc=25C) 94 W —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] —
Paket PG-TO252-3-313 (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55C to +175C -55C to +150C
Level MSL MSL1 (peak reflow up to 260C) 1 (Unlimited)
AEC-Q101 Qualification Qualified (automotive grade) —
Avalanche Tested 100% avalanche-tested —
RoHS Compliance Compliant (Green Package) —
Technology Trench MOSFET (OptiMOS-T2) OptiMOS 5 (Trench)
Series — OptiMOS 5
Part Status — Active
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 46 A
Continuous Drain Current (ID) at Ta=25C — [DATA_NEEDED: ID at Ta=25C PCB-mounted]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM peak value]
RDS(on) max at VGS=10 V — 9.7 mOhm
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg typ) — [DATA_NEEDED: total gate charge Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 36 W
Paket / Case — PG-TDSON-8-6 (SuperSO8 5x6 mm)
Status RoHS — Compliant
Avalanche Rated — Yes (EAS per datasheet)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon