IPD90N04S403ATMA1 vs BSC097N06NSATMA1 Comparison

Detailed side-by-side comparison of IPD90N04S403ATMA1 by Infineon and BSC097N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD90N04S403ATMA1 IPD90N04S403ATMA1 - 40V 90A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD90N04S403ATMA1 - 40V 90A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD90N04S403ATMA1 βœ“ Active
Infineon
BSC097N06NSATMA1 BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

BSC097N06NSATMA1 βœ“ Active

Specification Comparison

Parameter IPD90N04S403ATMA1 BSC097N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.38
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 β€”
Channel Type N-Channel β€”
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current (I_D, Tc) 90 A β€”
On-State Resistance (R_DS(on)) 3.2 mOhm typical at V_GS = 10 V β€”
Maximum Power Dissipation (P_D, Tc=25C) 94 W β€”
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Package PG-TO252-3-313 (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55C to +175C -55C to +150C
MSL Level MSL1 (peak reflow up to 260C) 1 (Unlimited)
AEC-Q101 Qualification Qualified (automotive grade) β€”
Avalanche Tested 100% avalanche-tested β€”
RoHS Compliance Compliant (Green Package) β€”
Technology Trench MOSFET (OptiMOS-T2) OptiMOS 5 (Trench)
Series β€” OptiMOS 5
Part Status β€” Active
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at Tc=25C β€” 46 A
Continuous Drain Current (ID) at Ta=25C β€” [DATA_NEEDED: ID at Ta=25C PCB-mounted]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM peak value]
RDS(on) max at VGS=10 V β€” 9.7 mOhm
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg typ) β€” [DATA_NEEDED: total gate charge Qg]
Power Dissipation at Ta=25C β€” 2.5 W
Power Dissipation at Tc=25C β€” 36 W
Package / Case β€” PG-TDSON-8-6 (SuperSO8 5x6 mm)
RoHS Status β€” Compliant
Avalanche Rated β€” Yes (EAS per datasheet)

Datasheets & Resources

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