IPD90N04S403ATMA1 vs BSC097N06NSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD90N04S403ATMA1 sa pamamagitan ng Infineon at BSC097N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD90N04S403ATMA1 - 40V 90A N-Ch OptiMOS-T2 MOSFET | Infineon
IPD90N04S403ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPD90N04S403ATMA1 | BSC097N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| On-State Resistance (R_DS(on)) | 3.2 mOhm typical at V_GS = 10 V | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 94 W | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Packhaging | PG-TO252-3-313 (DPAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature ng Junction na Operasyon | -55C to +175C | -55C to +150C |
| Level ng MSL | MSL1 (peak reflow up to 260C) | 1 (Unlimited) |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | — |
| RoHS Compliance | Compliant (Green Package) | — |
| Technology | Trench MOSFET (OptiMOS-T2) | OptiMOS 5 (Trench) |
| Series | — | OptiMOS 5 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 46 A |
| Continuous Drain Current (ID) at Ta=25C | — | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM peak value] |
| RDS(on) max at VGS=10 V | — | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 36 W |
| Packhaging / Kaso | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Tindminan RoHS | — | Compliant |
| Avalanche Rated | — | Yes (EAS per datasheet) |