IPD90N04S403ATMA1 vs IPC90N04S5L3R3ATMA1 Perbandingan

Perbandingan bersamaan detil IPD90N04S403ATMA1 dari Infineon dan IPC90N04S5L3R3ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD90N04S403ATMA1 IPC90N04S5L3R3ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS 5 40V
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tc) 90 A —
On-State Resistance (R_DS(on)) 3.2 mOhm typical at V_GS = 10 V —
Maximum Power Dissipation (P_D, Tc=25C) 94 W —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] —
Paket PG-TO252-3-313 (DPAK) PG-TDSON-8-34 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55C to +175C -55°C to +175°C
Level MSL MSL1 (peak reflow up to 260C) —
AEC-Q101 Qualification Qualified (automotive grade) —
Avalanche Tested 100% avalanche-tested 100% (production-level)
RoHS Compliance Compliant (Green Package) Compliant (Green Product)
Technology Trench MOSFET (OptiMOS-T2) —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Qualification — AEC-Q101 automotive qualified

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon