IPD90N04S403ATMA1 vs IPC90N04S5L3R3ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90N04S403ATMA1 disebabkan oleh Infineon dan IPC90N04S5L3R3ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD90N04S403ATMA1 IPC90N04S5L3R3ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS 5 40V
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tc) 90 A —
On-State Resistance (R_DS(on)) 3.2 mOhm typical at V_GS = 10 V —
Maximum Power Dissipation (P_D, Tc=25C) 94 W —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] —
Kemasan PG-TO252-3-313 (DPAK) PG-TDSON-8-34 (TDSON-8)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55C to +175C -55°C to +175°C
Aras MSL MSL1 (peak reflow up to 260C) —
AEC-Q101 Qualification Qualified (automotive grade) —
Avalanche Tested 100% avalanche-tested 100% (production-level)
RoHS Compliance Compliant (Green Package) Compliant (Green Product)
Technology Trench MOSFET (OptiMOS-T2) —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Qualification — AEC-Q101 automotive qualified

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