IPD90N06S407ATMA2 vs IPD70N10S312ATMA2 Perbandingan

Perbandingan bersamaan detil IPD90N06S407ATMA2 dari Infineon dan IPD70N10S312ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD90N06S407ATMA2 IPD70N10S312ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Enhancement Mode —
Drain-to-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D at T_C) 90 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
R_DS(on) Max at V_GS=10 V, I_D=90 A 6.9 mOhm —
Gate Threshold Voltage (V_GS(th)) 4 V at 40 uA —
Total Gate Charge (Q_G) at V_GS=10 V 56 nC —
Maximum Power Dissipation (P_D at T_C) 79 W —
Suhu Hubung Kerja -55 C to +175 C —
Storage Temperature [DATA_NEEDED: storage temperature range] —
Paket PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Yes (Green Product) —
MSL (Moisture Sensitivity Level) MSL1 (up to 260 C peak reflow) —
Automotive Qualification AEC-Q101 Qualified —
Avalanche Rating 100% Avalanche Tested —
Manufacturer — Infineon Technologies
Part Number — IPD70N10S312ATMA2
Technology — OptiMOS-T Power-MOSFET (N-Channel)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc) — 70 A
Power Dissipation (Ptot, Tc=25C) — 125 W
On-State Resistance RDS(on) — [DATA_NEEDED: typical RDS(on) at VGS=10V]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Rentang Suhu Kerja — -55C to +175C
Jumlah Pin — 3 (Gate, Drain, Source)
Channel Type — N-Channel Enhancement Mode
Status RoHS — Compliant
Level MSL — 1 (unlimited floor life)
Avalanche Rated — Yes

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