IPG20N06S2L65AATMA1 vs IPG20N10S4L35ATMA1 Perbandingan
Perbandingan bersamaan detil IPG20N06S2L65AATMA1 dari Infineon dan IPG20N10S4L35ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPG20N06S2L65AATMA1 | IPG20N10S4L35ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS™, Automotive |
| FET Type | Dual N-Channel (Half Bridge / Independent) | 2 N-Channel (Dual) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | — |
| Paket | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55 C to +175 C | 175°C max junction |
| AEC-Q101 Qualification | Yes | — |
| Level MSL | MSL1 (peak reflow 260 C) | MSL1 (up to 260°C peak reflow) |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| Part Number | — | IPG20N10S4L35ATMA1 |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | — | 20 A |
| R<sub>DS(on)</sub> Max | — | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A |
| Gate Threshold (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: typical Vgs(th) value] |
| Power Dissipation (P<sub>D</sub>) | — | 43 W |
| Paket / Case | — | PG-TDSON-8-4 (8-Pin TDSON EP) |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Rated | — | 100% Avalanche Tested |