IPL60R065C7AUMA1 vs IPL60R105P7AUMA1 Perbandingan

Perbandingan bersamaan detil IPL60R065C7AUMA1 dari Infineon dan IPL60R105P7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPL60R065C7AUMA1 IPL60R105P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS P7
Part Status Active —
FET Type N-Channel —
Process Technology CoolMOS C7 (Superjunction) —
Maximum Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D, T_C=25°C) 29 A —
On-Resistance (R_DS(on), typ., V_GS=10V) 65 mΩ —
Maximum Power Dissipation (P_D, T_C=25°C) 180 W —
Gate-Source Voltage (V_GS, max) ±20 V —
Gate-Source Threshold (V_GS(th), typ.) 3.5 V —
Paket / Case PG-VSON-4-1 (Source-Down) —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C (T_J) -55C to +150C
Status RoHS Compliant with Exemption Compliant
Automotive Qualified (AEC-Q101) No —
Total Gate Charge (Q_G, typ.) [DATA_NEEDED: Q_G typ. value] —
Output Capacitance Stored Energy (E_OSS) [DATA_NEEDED: E_OSS typ. value] —
Technology — Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) — 600 V
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Paket — PG-VSON-4 (4-pin SMD with exposed pad)
Channel Type — N-Channel
Level MSL — [DATA_NEEDED: MSL rating]
Bebas Halogen — Yes
Lead-Free — Yes

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