IPN60R360P7SATMA1 vs IPB60R280P7ATMA1 Perbandingan

Perbandingan bersamaan detil IPN60R360P7SATMA1 dari Infineon dan IPB60R280P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPN60R360P7SATMA1 IPB60R280P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0,88
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
Technology Superjunction (SJ) N-Channel MOSFET Superjunction (SJ)
Drain-Source Voltage (VDS) 600 V —
On-Resistance RDS(on) max 360 mΩ —
Continuous Drain Current (ID) at TC=25°C 9 A —
Continuous Drain Current (ID) at TA=25°C [DATA_NEEDED: ID at TA=25°C with standard PCB] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC=25°C 7 W —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (QG) [DATA_NEEDED: QG typical at VGS=10V] —
Rentang Suhu Kerja -55°C to +150°C (TJ) -55 °C to +150 °C (T_j max)
Paket PG-SOT223 (Surface Mount) PG-TO263-3 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
ESD Protection Yes (integrated cell) —
Bebas Halogen Yes (per Infineon datasheet) —
RoHS Compliance Compliant —
Jumlah Pin 3 functional + tab (PG-SOT223) 3 (2 + Tab)
Body Diode Integrated, fast-recovery —
Product Family — CoolMOS P7 (600 V)
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, T_C=25°C) — 12 A
On-Resistance R_DS(on) max (V_GS=10V) — 280 mOhm
Gate-Source Threshold V_GS(th) typ — 3.5 V
Power Dissipation P_D (T_C=25°C) — 53 W
Configuration — Single N-Channel
Status RoHS — Compliant
Lead-Free — Yes
Generation — 7th Gen CoolMOS (successor to P6)

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