IPP045N10N3GXKSA1 vs IPP075N15N3GXKSA1 Perbandingan

Perbandingan bersamaan detil IPP045N10N3GXKSA1 dari Infineon dan IPP075N15N3GXKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP045N10N3GXKSA1 IPP075N15N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPP045N10N3GXKSA1 —
Technology OptiMOS 3 N-Channel MOSFET (OptiMOS 3)
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C 100 A —
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C [DATA_NEEDED: I_D at TC=100C] —
Pulsed Drain Current (I<sub>D,pulse</sub>) 137 A —
On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V 4.5 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> 3.5 V (typical, per LCSC listing) —
Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C 214 W —
Paket TO-220-3 (PG-TO220-3) through-hole PG-TO220-3 (TO-220 through-hole)
Rentang Suhu Kerja -55 °C to +175 °C (junction, typical MOSFET limit) [DATA_NEEDED: junction operating temperature range]
Tipe Mounting Through Hole Through Hole
Status RoHS Compliant (per LCSC datasheet excerpt) —
Lead-Free Yes (Infineon G/GX part suffix) —
Level MSL N/A (through-hole package) —
Product Family — OptiMOS 3
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

Spek dan Sumber

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