IPT017N12NM6ATMA1 vs IQE220N15NM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IPT017N12NM6ATMA1 dari Infineon dan IQE220N15NM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPT017N12NM6ATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT017N12NM6ATMA1 | — |
| Technology | OptiMOS 6 | OptiMOS 5, Source-Down |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | 150 V |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 331 A | — |
| On-Resistance RDS(on) max | 1.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 395 W | — |
| Paket | PG-HSOF-8 (TOLL) | PG-WHTFN-9 (Source-Down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +175C | — |
| Jumlah Pin | 8 + tab | — |
| Packaging | Tape & Reel | — |
| Status RoHS | Compliant | Compliant |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | 4.6 V |
| Rentang Suhu Kerja | — | -55C to +150C (junction) |